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| New TSOP382../TSOP384.. Vishay Semiconductors IR Receiver Modules for Remote Control Systems Description The TSOP38#.. series are miniaturized receivers for infrared remote control systems. A PIN diode and a preamplifier are assembled on a lead frame, the epoxy package acts as an IR filter. The demodulated output signal can be directly decoded by a microprocessor. The TSOP382.. is compatible with all common IR remote control data formats. The TSOP384.. is optimized to suppress almost all spurious pulses from energy saving fluorescent lamps but will also suppress some data signals. This component has not been qualified according to automotive specifications. 19026 Mechanical Data Pinning: 1 = OUT, 2 = GND, 3 = VS Features * Very low supply current * Photo detector and preamplifier in one package e3 * Internal filter for PCM frequency * Improved shielding against EMI * Supply voltage: 2.5 V to 5.5 V * Improved immunity against ambient light * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC * Insensitive to supply voltage ripple and noise Product Matrix Standard applications TSOP382.. Very noisy enviroments TSOP384.. Parts Table Part TSOP38#30 TSOP38#33 TSOP38#36 TSOP38#38 TSOP38#40 TSOP38#56 Carrier Frequency 30 kHz 33 kHz 36 kHz 38 kHz 40 kHz 56 kHz Block Diagram 16833 Application Circuit 19267 3 30 k VS 1 Input AGC Band Pass Demodulator OUT 2 PIN Control Circuit GND IR Transmitter with TSALxxxx TSOP.... VS OUT Circuit C VO GND No external components are required Document Number 81733 Rev. 1.0, 08-Aug-07 www.vishay.com 1 New TSOP382../TSOP384.. Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Supply voltage Supply current Output voltage Output current Junction temperature Storage temperature range Operating temperature range Power consumption Soldering temperature (Tamb 85 C) t 10 s, 1 mm from case (Pin 3) (Pin 3) (Pin 1) (Pin 1) Test condition Symbol VS IS VO IO Tj Tstg Tamb Ptot Tsd Value - 0.3 to + 6.0 3 - 0.3 to (VS + 0.3) 5 100 - 25 to + 85 - 25 to + 85 10 260 Unit V mA V mA C C C mW C Electrical and Optical Characteristics Tamb = 25 C, unless otherwise specified Parameter Supply current (Pin 3) Supply voltage Transmission distance Ev = 0, test signal see fig. 1, IR diode TSAL6200, IF = 250 mA IOSL = 0.5 mA, Ee = 0.7 mW/m2, test signal see fig. 1 Pulse width tolerance: tpi - 5/fo < tpo < tpi + 6/fo, test signal see fig. 1 tpi - 5/fo < tpo < tpi + 6/fo, test signal see fig. 1 Angle of half transmission distance Test condition Ev = 0, VS = 3.3 V Ev = 40 klx, sunlight Symbol ISD ISH VS d 2.5 45 Min 0.27 Typ. 0.35 0.45 5.5 Max 0.45 Unit mA mA V m Output voltage low (Pin 1) VOSL 100 mV Minimum irradiance Ee min Ee max 1/2 0.15 0.35 mW/m2 W/m2 Maximum irradiance Directivity 30 45 deg Typical Characteristics Tamb = 25 C, unless otherwise specified Ee Optical Test Signal 1 tpo - Output Pulse Width (ms) (IR diode TSAL6200, IF = 0.4 A, 30 pulses, f = f0, T = 10 ms) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.1 Output Pulse Width Input Burst Length t tpi * * tpi VO VOH VOL td1 ) T 10/fo is recommended for optimal function 16110 Output Signal 1) 2) 7/f0 < td < 15/f0 tpi - 5/f 0 < tpo < tpi + 6/f 0 tpo2 ) t = 950 nm, optical test signal, fig.1 1 10 100 1000 10000 100000 20752 Ee - Irradiance (mW/m) Figure 1. Output Active Low Figure 2. Pulse Length and Sensitivity in Dark Ambient www.vishay.com 2 Document Number 81733 Rev. 1.0, 08-Aug-07 New TSOP382../TSOP384.. Vishay Semiconductors 600 s T = 60 ms Output Signal, (see fig. 4) 600 s t Eemin - Threshold Irradiance (mW/m) Ee Optical Test Signal 4 Correlation with ambient light sources: 3.5 10 W/m = 1.4 kLx (Std. illum. A, T = 2855 K) 10 W/m = 8.2 kLx (Daylight, T = 5900 K) 3 2.5 2 1.5 1 0.5 0 0.01 Wavelength of ambient illumination: = 950 nm 94 8134 VO VOH VOL Ton Toff t 20757 0.1 1 10 100 Ee - Ambient DC Irradiance (W/m) Figure 3. Output Function Figure 6. Sensitivity in Bright Ambient Ee min - Threshold Irradiance (mW/m) 0.8 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 1 10 100 1000 Ton, Toff - Output Pulse Width (ms) 0.7 0.6 0.5 Ton f = 100 Hz f = 10 kHz f = 20 kHz Toff 0.4 0.3 0.2 0.1 0 0.1 = 950 nm, optical test signal, fig. 3 1 10 100 1000 10000 f = 30 kHz f = fo 20759 Ee - Irradiance (mW/m) 20753 VsRMS - AC Voltage on DC Supply Voltage (mV) Figure 4. Output Pulse Diagram Figure 7. Sensitivity vs. Supply Voltage Disturbances 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.7 16925 500 E e min /E e - Rel. Responsivity E - Max. Field Strength (V/m) 450 400 350 300 250 200 150 100 50 0 0 500 1000 1500 2000 2500 3000 f = f0 5 % f (3 dB) = f0 /10 0.9 1.1 1.3 20747 f/f0 - Relative Frequency f - EMI Frequency (MHz) Figure 5. Frequency Dependence of Responsivity Figure 8. Sensitivity vs. Electric Field Disturbances Document Number 81733 Rev. 1.0, 08-Aug-07 www.vishay.com 3 New TSOP382../TSOP384.. Vishay Semiconductors 1 0.9 0 10 20 30 Max. Envelope Duty Cycle 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 f = 38 kHz, Ee = 2 mW/m 20 40 60 80 100 120 19258 40 1.0 0.9 TSOP382.. TSOP384.. 50 60 70 80 0.6 0.4 0.2 0 0.2 0.4 0.6 d rel - Relative Transmission Distance 0.8 0.7 20754 Burst Length (number of cycles/burst) Figure 9. Max. Envelope Duty Cycle vs. Burst Length Figure 12. Horizontal Directivity Ee min - Threshold Irradiance (mW/m) 0.3 0.25 0.2 0 10 20 30 40 1.0 50 60 70 80 - 10 10 30 50 70 90 19259 0.15 0.1 0.05 0 - 30 0.9 0.8 0.7 20755 Tamb - Ambient Temperature (C) 0.6 0.4 0.2 0 0.2 0.4 0.6 d rel - Relative Transmission Distance Figure 10. Sensitivity vs. Ambient Temperature Figure 13. Vertical Directivity 1.2 0.2 0.18 S ( ) rel - Relative Spectral Sensitivity 1.0 0.8 0.6 0.4 0.2 0.0 750 850 950 1050 1150 Ee min - Sensitivity (mW/m) 0.16 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0 2 2.5 3 3.5 4 4.5 5 5.5 6 16919 - Wavelength (nm) 20756 Vs - Supply Voltage (V) Figure 11. Relative Spectral Sensitivity vs. Wavelength Figure 14. Sensitivity vs. Supply Voltage www.vishay.com 4 Document Number 81733 Rev. 1.0, 08-Aug-07 New TSOP382../TSOP384.. Vishay Semiconductors Suitable Data Format The TSOP38#.. series is designed to suppress spurious output pulses due to noise or disturbance signals. Data and disturbance signals can be distinguished by the devices according to carrier frequency, burst length and envelope duty cycle. The data signal should be close to the band-pass center frequency (e.g. 38 kHz) and fulfill the conditions in the table below. When a data signal is applied to the TSOP38#.. in the presence of a disturbance signal, the sensitivity of the receiver is reduced to insure that no spurious pulses are present at the output. Some examples of disturbance signals which are suppressed are: * DC light (e.g. from tungsten bulb or sunlight) * Continuous signals at any frequency * Strongly or weakly modulated noise from fluorescent lamps with electronic ballasts (see figure 15 or figure 16). IR Signal IR Signal from fluorescent lamp with low modulation 0 16920 5 10 15 20 Time (ms) Figure 15. IR Signal from Fluorescent Lamp with low Modulation IR Signal from fluorescent lamp with high modulation IR Signal 0 16921 10 10 15 20 Time (ms) Figure 16. IR Signal from Fluorescent Lamp with high Modulation TSOP382.. Minimum burst length After each burst of length A gap time is required of For bursts greater than A gap time in the data stream is needed of Maximum continuous short bursts/second Compatible to NEC code Compatible to RC5/RC6 code Compatible to Sony code Compatible to Thomson 56 kHz code Compatible to Mitsubishi code(38 kHz, preburst 8 ms, 16 bit) Compatible to Sharp code Suppression of interference from fluorescent lamps 10 cycles/burst 10 to 70 cycles 10 cycles 70 cycles > 4 x burst length 1800 yes yes yes yes yes yes Most common disturbance signals are suppressed TSOP384.. 10 cycles/burst 10 to 35 cycles 10 cycles 35 cycles > 10 x burst length 1500 yes yes no yes no yes Even extreme disturbance signals are suppressed For data formats with short bursts please see the data sheet for TSOP381../TSOP383.. Document Number 81733 Rev. 1.0, 08-Aug-07 www.vishay.com 5 New TSOP382../TSOP384.. Vishay Semiconductors Package Dimensions in millimeters 19009 www.vishay.com 6 Document Number 81733 Rev. 1.0, 08-Aug-07 New TSOP382../TSOP384.. Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 81733 Rev. 1.0, 08-Aug-07 www.vishay.com 7 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
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